BDX53, 53a, 53b, 53c npn plastic power transistors bdx54, 54a, 54b, 54c pnp plastic power transistors power darlingtons for linear and switching applications absolute maximum ratings 53 53a 53b 53c 54 54a 54b 54c collector-base voltage (open emitter) v cbo max. 45 60 80 100 v collector-emitter voltage (open base) v ceo max. 45 60 80 100 v collector current i c max. 8.0 a total power dissipation up to t c = 25c p tot max. 60 w junction temperature t j max. 150 c collector-emitter saturation voltage i c = 3 a; i b = 12 ma v cesat max. 2.0 v d.c. current gain i c = 3 a; v ce = 3 v h fe min. 750 ratings (at t a =25c unless otherwise specified) limiting values 53 53a 53b 53c 54 54a 54b 54c collector-base voltage (open emitter) v cbo max. 45 60 80 100 v collector-emitter voltage (open base) v ceo max. 45 60 80 100 v emitter-base voltage (open collector) v ebo max. 5.0 v BDX53, BDX53a, BDX53b, BDX53c bdx54, bdx54a, bdx54b, bdx54c pin configuration 1. base 2. collector 3. emitter 4. collector b 1 23 j m g d h a o o k n l f e c dim min. max. all diminsions in mm. a 14.42 16.51 b 9.63 10.67 c 3.56 4.83 d0.90 e 1.15 1.40 f 3.75 3.88 g 2.29 2.79 h 2.54 3.43 j0.56 k 12.70 14.73 l 2.80 4.07 m 2.03 2.92 n 31.24 odeg 7 1 2 3 4 to-220 plastic package transys electronics li m ite d
collector current i c max. 8.0 a collector current (peak value) i cm max. 12 a base current i b max. 0.2 a total power dissipation upto t c =25c p tot max. 60 w derate above 25c max. 0.48 w / c junction temperature t j max. 150 c storage temperature t stg ?65 to +150 oc thermal resistance from junction to case r th j?c 2.08 c / w from junction to ambient r th j?a 7.0 c / w characteristics t amb = 25c unless otherwise specified 53 53a 53b 53c 54 54a 54b 54c collector cutoff current i b = 0; v cb = 45 v i cbo max. 0.2 ? ? ? ma i b = 0; v cb = 60 v i cbo max. ? 0.2 ? ? ma i b = 0; v cb = 80 v i cbo max. ? ? 0.2 ? ma i b = 0; v cb = 100 v i cbo max. ? ? ? 0.2 ma i b = 0; v ce = 22 v i ceo max. 0.5 ? ? ? ma i b = 0; v ce = 30 v i ceo max. ? 0.5 ? ? ma i b = 0; v ce = 40 v i ceo max. ? ? 0.5 ? ma i b = 0; v ce = 50 v i ceo max. ? ? ? 0.5 ma emitter cut-off current i c = 0; v eb = 5 v i ebo max. 2.0 ma breakdown voltages i c = 100 ma; i b = 0 v ceo(sus) * min. 45 60 80 100 v i c = 1 ma; i e = 0 v cbo min. 45 60 80 100 v i e = 1 ma; i c = 0 v ebo min. 5.0 v saturation voltages i c = 3 a; i b = 12 ma v cesat * max. 2.0 v v besat * max. 2.5 v d.c. current gain i c = 3 a; v ce = 3 v h fe * min. 750 small signal current gain i c = 3 a; v ce = 4 v; f = 1.0 mhz |h fe | min. 4.0 output capacitance f = 1.0 mhz i e = 0; v cb = 10 v npn c o max. 300 pf pnp c o max. 200 pf parallel-diode forward voltage i f = 3 a v f max. 2.5 v i f = 8 a v f typ. 2.5 v * pulse test: pulse width
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